High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

Marta Mas-Torrent; Murat Durkut; Peter Hadley; Xavi Ribas; Concepció Rovira

doi:10.1021/ja0393933

High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

Marta Mas-Torrent
, Murat Durkut
, Peter Hadley
, Xavi Ribas
, Concepció Rovira

Delft University of Technology
Autonomous University of Barcelona

Producción científica: Contribución a una revista › Artículo científico › revisión exhaustiva

353 Citas (Scopus)

Resumen

Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm²/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 10⁵ was obtained for this device.

Idioma original	Inglés
Páginas (desde-hasta)	984-985
Número de páginas	2
Publicación	Journal of the American Chemical Society
Volumen	126
N.º	4
DOI	https://doi.org/10.1021/ja0393933
Estado	Publicada - 4 feb 2004
Publicado de forma externa	Sí

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@article{503d72221da943c28da7605a5714c05f,

title = "High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors",

abstract = "Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.",

author = "Marta Mas-Torrent and Murat Durkut and Peter Hadley and Xavi Ribas and Concepci{\'o} Rovira",

year = "2004",

month = feb,

day = "4",

doi = "10.1021/ja0393933",

language = "English",

volume = "126",

pages = "984--985",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

AU - Mas-Torrent, Marta

AU - Durkut, Murat

AU - Hadley, Peter

AU - Ribas, Xavi

AU - Rovira, Concepció

PY - 2004/2/4

Y1 - 2004/2/4

N2 - Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.

AB - Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.

UR - https://www.scopus.com/pages/publications/0942298062

U2 - 10.1021/ja0393933

DO - 10.1021/ja0393933

M3 - Scientific article

AN - SCOPUS:0942298062

SN - 0002-7863

VL - 126

SP - 984

EP - 985

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 4

ER -

High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

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