High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

Marta Mas-Torrent; Murat Durkut; Peter Hadley; Xavi Ribas; Concepció Rovira

doi:10.1021/ja0393933

High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

Marta Mas-Torrent
, Murat Durkut
, Peter Hadley
, Xavi Ribas
, Concepció Rovira

Delft University of Technology
Autonomous University of Barcelona

Research output: Contribution to journal › Scientific article › peer-review

353 Citations (Scopus)

Abstract

Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm²/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 10⁵ was obtained for this device.

Original language	English
Pages (from-to)	984-985
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	126
Issue number	4
DOIs	https://doi.org/10.1021/ja0393933
Publication status	Published - 4 Feb 2004
Externally published	Yes

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abstract = "Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.",

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AU - Hadley, Peter

AU - Ribas, Xavi

AU - Rovira, Concepció

PY - 2004/2/4

Y1 - 2004/2/4

N2 - Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.

AB - Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.

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High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

Abstract

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