High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

Marta Mas-Torrent; Murat Durkut; Peter Hadley; Xavi Ribas; Concepció Rovira

doi:10.1021/ja0393933

High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

Marta Mas-Torrent
, Murat Durkut
, Peter Hadley
, Xavi Ribas
, Concepció Rovira

Delft University of Technology
Autonomous University of Barcelona

Producció científica: Contribució a revista › Article científic › Avaluat per experts

353 Cites (Scopus)

Resum

Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm²/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 10⁵ was obtained for this device.

Idioma original	Anglès
Pàgines (de-a)	984-985
Nombre de pàgines	2
Revista	Journal of the American Chemical Society
Volum	126
Número	4
DOIs	https://doi.org/10.1021/ja0393933
Estat de la publicació	Data de publicació - 4 de febr. 2004
Publicat externament	Sí

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title = "High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors",

abstract = "Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.",

author = "Marta Mas-Torrent and Murat Durkut and Peter Hadley and Xavi Ribas and Concepci{\'o} Rovira",

year = "2004",

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doi = "10.1021/ja0393933",

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T1 - High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

AU - Mas-Torrent, Marta

AU - Durkut, Murat

AU - Hadley, Peter

AU - Ribas, Xavi

AU - Rovira, Concepció

PY - 2004/2/4

Y1 - 2004/2/4

N2 - Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.

AB - Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device.

UR - https://www.scopus.com/pages/publications/0942298062

U2 - 10.1021/ja0393933

DO - 10.1021/ja0393933

M3 - Scientific article

AN - SCOPUS:0942298062

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JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 4

ER -

High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

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